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| N Netz-Thyristor Phase Control Thyristor Datenblatt / Data sheet T 1451N = 100 V, v = 0,67 V Thermischev Eigenschaften dv /dt = 20 V/s, -di /dt = 10 A/s 4.Kennbuchstabe / 4 letter O Mechanische =Eigenschaften T T RM DM DRM D T th vj vj max Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Freiwerdezeit circuit commutated turn-off time Tvj = Tvj max, iTM = ITAVM tq typ. Qr max. IRM max. 450 s Sperrverzogerungsladung recovered charge Ruckstromspitze peak reverse recovery current iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM Tvj = Tvj max iTM = ITAVM, -diT/dt = 10 A/s VR = 0,5VRRM, VRM = 0,8VRRM 15 mAs 320 A Thermische Eigenschaften / Thermal properties Innerer Warmewiderstand thermal resistance, junction to case Kuhlflache / cooling surface beidseitig / two-sided, = 180sin beidseitig / two-sided, DC Anode / anode, DC Kathode / cathode, DC Kuhlflache / cooling surface beidseitig / two-sided einseitig / single-sided RthJC max. max. max. max. 0,0097 0,009 0,014 0,0250 C/W C/W C/W C/W Ubergangs-Warmewiderstand thermal resistance, case to heatsink Hochstzulassige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operating temperature Lagertemperatur storage temperature RthCH Tvj max Tc op Tstg max. 0,0025 C/W max. 0,005 C/W 125 C -40...+125 C -40...+150 C Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see annex Si-Element mit Druckkontakt Si-pellet with pressure contact Anpresskraft clamping force Steueranschlusse control terminals Gewicht weight Kriechstrecke creepage distance Schwingfestigkeit vibration resistance f = 50 Hz DIN 46244 Gate Kathode /Cathode G F Seite 3 page 3 36...52 A 4,8x0,8 A 6,3x0,8 typ. kN 1500 g 33 mm 50 m/s Mit diesem Datenblatt werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen technischen Erlauterungen. This data sheet specifies semiconductor devices, but promises no characteristics. It is valid in combination with the belonging technical notes. BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 2/8 N Netz-Thyristor Phase Control Thyristor Datenblatt / Data sheet T 1451N Mabild 45 1 2 1: Anode/Anode 2: Kathode/Cathode 4: Gate 5: Hilfskathode/ Cathode (control terminal) BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 3/8 N Netz-Thyristor Phase Control Thyristor Datenblatt / Data sheet T 1451N R,t - Werte R R,T-Werte beidseitig two-sided Analytische Elemente des transienten Warmewiderstandes Z thJC Analytical elements of transient thermal impedance Z thJC Pos. n Rthn [C/W] 1 0,00223 2,18 0,00623 6,1 0,01503 14,7 2 0,0027 0,44 0,0037 0,6 0,0059 0,96 3 0,0028 0,11 0,0028 0,11 0,0028 0,11 4 0,0008 0,015 0,0008 0,015 0,0008 0,015 5 0,00047 0,0041 0,00047 0,0041 0,00047 0,0041 nmax n=1 6 7 n [s] Rthn [C/W] anodenseitg anode-sided n [s] Rthn [C/W] kathodenseitig cathode-sided n [s] Analytische Funktion / Analytical function: ZthJC = Rthn 1 - e n -t 0 ,0 3 0 ,0 2 5 c 0 ,0 2 [K/W] Z 0 ,0 1 d 0 ,0 0 5 0 0 ,0 0 1 0 ,0 1 0 ,1 t [s ] 1 10 100 a Transienter innerer Warmewiderstand fur DC/ Transient thermal impedance Z thJC = f(t) for DC Beidseitige Kuhlung / Two-sided cooling Anodenseitige Kuhlung / Anode-sided cooling Kathodenseitige Kuhlung / Cathode-sided cooling BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 4/8 th JC 0 ,0 1 5 N Netz-Thyristor Phase Control Thyristor 3700 3600 Diagramme Diagramme 3500 3400 3300 3200 3100 3000 2900 2800 2700 2600 2500 2400 2300 2200 2100 2000 i T [V] 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 0 Datenblatt / Data sheet T 1451N Durchlasskennlinie typ . m a x. 0,5 1 v T [V ] 1,5 2 2,5 Grenzdurchlakennlinie / Limiting on-state characteristic iT = f(vT) Tvj = Tvj max BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 5/8 N Netz-Thyristor Phase Control Thyristor 30 20 Datenblatt / Data sheet T 1451N Durchlassverluste 10 c 5 a -40C 2 +25C b v G [V] +125C 1 0,5 0,2 10 20 50 100 200 500 1000 2000 5000 10000 iG [mA] Steuercharakteristik vG = f (iG) mit Zundbereichen fur VD = 6 V Gate characteristic vG = f (iG) with triggering area for VD = 6 V Hochstzulassige Spitzensteuerverlustleistung / Maximum rated peak gate power dissipation PGM = f (tg) : a - 20 W/10ms b - 40 W/1ms c - 60 W/0,5ms BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 6/8 N Netz-Thyristor Phase Control Thyristor 30 Datenblatt / Data sheet T 1451N Tc beidseitig 25 20 Qr [mAs] 15 10 5 0 0 5 10 15 - d i/d t [ A / s ] 20 25 30 35 Sperrverzogerungsladung / Recovered charge Qr = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 7/8 N Netz-Thyristor Phase Control Thyristor 800 Datenblatt / Data sheet T 1451N Ta bei Sinus 700 600 500 IRM [A] 400 300 200 100 0 0 5 10 15 - d i/d t [ A / s ] 20 25 30 35 Ruckstromspitze / Peak reverse recovery current IRM = f(-di/dt) Tvj=Tvjmax, vR=0,5 VRRM, VRM=0,8 VRRM BIP AM / SM PB, 2001-02-06, Przybilla J. / Keller Seite/page 8/8 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". |
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